منابع مشابه
MoS2 transistors operating at gigahertz frequencies.
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, logic circuits, and optoelectronic devices have been demonstrated usin...
متن کاملOperation of graphene transistors at gigahertz frequencies.
Top-gated graphene transistors operating at high frequencies (gigahertz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f frequency dependence, indicating a FET-like behavior for graphene transistors. The cutoff frequency f(T) is found to be proportional to the dc transconductance g(m) of the device, consistent with the relation f(T...
متن کاملModelling End - of - the - Roadmap Transistors
In this paper we present a methodology for statistical 3D simulation of end-of-theroadmap decananometre and nanometre scale transistors. The numerical simulation approach is based on the recently advanced density gradient formalism and captures both quantum confinement and source-to-drain tunnelling. We use our ‘atomistic’ device simulator to study intrinsic parameter fluctuations introduced by...
متن کاملOrganic Field-Effect Transistors
Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...
متن کاملOrganic field effect transistors
This chapter aims to provide the reader with a practical knowledge about electrical methods to measure organic thin film transistor devices. It presents a series of recipes, which allow the experimentalist to gain insight into the performance and limitations of the devices and circuits being measured. It also gives guidelines on how to correctly interpret the measurements and to provide feedbac...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Functional Materials
سال: 2019
ISSN: 1616-301X,1616-3028
DOI: 10.1002/adfm.201903812